ナノスケールにおけるSi-Ge界面近傍のひずみ・応力場評価

抄録

We analyzed the stress distribution around the interface between Ge and Si using the molecular statics with the MEAM and SW potentials. The lattice constants of Ge and Si are different of 4%, and the difference of lattice constant caused misfit dislocations along the interface. We also analyzed the stress distribution using the anisotropic linear elastic theory superposing the coherent stress field and the stress around the dislocation. Stress distributions obtained by the molecular simulation and the anisotropic elasticity are in good agreement.