ナノスケールにおけるミスフィット転位が存在する異種材界面近傍の応力場評価

抄録

We analyzed the stress distribution along an interface between Ge and Si that beween SiGe and Si using the molecular statics with the MEAM potentials. The lattice constants of Ge and Si are different of 4%, the lattice constants of SiGe and Si are different of 0.95%, and these differences of lattice constants caused misfit dislocations along the interface. We also analyzed the stress distribution using the anisotropic linear elastic theory superposing the coherent stress field and the stress around the dislocation. Stress distributions obtained by the molecular simulation and the anisotropic elasticity are in good agreement.