抄録
Crystal regularity governs final accuracy in anisotropic etching process since the final shape consists of specific crystal planes. However the size is limited up to millimeter order, this process is not suitable for processing the large size. This paper proposes a combined process of lapping and anisotropic etching to achieve large-scale regular shape with high accuracy. Removal amount and rate of specific crystal planes were analyzed and it was proven that the single crystal silicon was anisotropically machined under the control of lapping pressure. The maximum ratio of the removal rate to one of (111) plane was 2.1. It was shown the ability of the combined process to make surface of the (111) planes smoother in large scale.
