Abstract
Single-crystal InP is a new compound semiconductor material. In the present work, diamond turning experiments on InP (100) were conducted to examine its machining characteristics. The surface texture was found to change significantly with workpiece crystal orientations. Three kinds of surface textures were observed during the brittle-ductile transition of machining mode. The critical undeformed chip thickness at which completely ductile-cut surfaces were obtained on all orientations was approximately 20〜50 nm. A smooth surface of 26 nmRy was obtained with generating continuous ductile chips. These results provide feasibility for high-efficiency fabrication of InP substrates by diamond turning.
