抄録
In this work, we propose the tensile testing of single crystal silicon in transmission electron microscope (TEM). This method enables us to observe a tensile deformation under stress loading, fracture process of single crystal silicon and dislocation. Deep reactive ion etching was used to fabricate devices which made of a 4-inch silicon-on-insulator (SOI) wafer. Driving method of tensile testing was piezo elements built into TEM holder.
