MNM-3A-6 透過型電子顕微鏡によるSi単結晶の転位の観察(セッション 3A 単結晶・多結晶シリコンの疲労寿命評価とメカニズムの解明)

抄録

Dislocations were introduced into Si single crystals between 90 and 200℃ by scratching. The dislocations were examined by transmission electron microscopy and their natures (snuffle set or glide set) determined.