OS7-3-6 RFマグネトロンスパッタリング法によるPMN-PT薄膜の圧電特性(OS7 最先端材料が拓くマイクロ・ナノ工学の新展開(3))

抄録

We evaluated compositional dependence of piezoelectric and dielectric properties of Pb(Mg_<1/3>Nb_<2/3>)_<1-x>Ti_x(O_3(PMN-PT) films by using combinatorial sputtering method. Compositional gradient PMN-PT films were deposited on Pt/Ti/Si substrates by using multi-target sputtering. Piezoelectric and dielectric properties of PMN-PT films were evaluated as a function of composition x in Pb(Mg_<1/3>Nb_<2/3>)_<1-x>Ti_xO_3. Relative dielectric constant and remnant polarization (P_r) increased with decreasing PT ratio.