マイクロ・ナノ工学シンポジウム
Online ISSN : 2432-9495
セッションID: PN-119
会議情報

DyScO3基板を用いた BFO 薄膜の基礎特性
*今泉 文伸
著者情報
会議録・要旨集 認証あり

詳細
抄録
BiFeO3 thin film on DyScO3 substrate was fabricated by RF sputtering and annealing. The BFO thin film is expected to be used for ferroelectric memories, piezoelectric devices, sensors and solar cells. DyScO3 substrate is the smalllattice-mismatched substrates for BFO thin film. It was found that the (110) peak area which shows the crystallinity of BFO was appeared from X-ray diffraction (XRD). From results of X-ray photoelectron spectroscopy (XPS), BFO thin film has Fe2+ and Fe3+ statement. The materials of BiFeO3 thin film on DyScO3 substrate have the effectiveness in the future.
著者関連情報
© 2017 一般社団法人 日本機械学会
前の記事 次の記事
feedback
Top