抄録
The accurate analytical model for the dynamic structure analysis of Chemical Mechanical Polishing (CMP) process has been proposed by the authors. By applying to the three dimensional (3D) coupled fluid-structure analysis of the CMP process, the effect of the damping property of the polishing pad on the process was investigated. It was confirmed that the stress concentration beneath the leading edge of the wafer changes significantly depending on the consideration of the damping property. Consequently, the analytical results of polishing pressure and fluid pressure distributions considerably depend on the damping property too. The fluid pressure measuring experiment was also carried out, and it is confirmed that the feature of the measured fluid pressure distribution agrees with that simulated by developed CMP process analytical model.
