抄録
For realization of the next generation thin-film pattern formation technology by the lift-off method, the inversely-tapered resist profile with interstice has been proposed, and its fundamental effectiveness was shown. Furthermore, a method was given, for calculation of thickness distribution of the film pattern formed with the proposed resist profile, and a design method of the proposed resist profile based on the calculation method was also suggested. However, in these methods, there are some problems in identification of process parameters and definition of proper resist profile. This paper proposes a systematic method for identification of the parameters and a design method of proper resist profile.
