Proceedings of thermal engineering conference
Online ISSN : 2433-1317
2002
Conference information
Analysis of Temperature Distribution in Oxide-Crystal during CZ Single-Crystal Growth
Shigeki HIRASAWAMasato IKEGAWAAkihiro GUNJIHiroyuki ISHIBASHITetsuo MUNAKATA
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Pages 283-284

Details
Abstract
Temperature distributions in a GSO crystal during CZ single-crystal growth were numerically investigated by thermal radiation heat transfer analysis with 2D axisymmetric conduction. As properties of the GSO crystal changed from transparent to opaque at a wavelength of 4.5μm, the band-energy approximation was used. We assumed that melt was opaque and the temperature was constant. Longitude and radial temperature distributions in the crystal were calculated by changing parameters of the apparatus. Radial temperature distribution was alwas large at the top of the Crystal. There are optimum height, diameter and temperature of the crucible to reduce radial temperature distribution in the crystal in the crucible. Radial temperature distribution increased when the diameter of the crystal was large.
Content from these authors
© 2002 The Japan Society of Mechanical Engineers
Previous article Next article
feedback
Top