抄録
Degradation of capacitance and insulation resistance under DC field has been studied with special reference to the microstructure of BaTiO3-based dielectric materials for Ni-electrode multilayer ceramic capacitors. The presence of dislocation loops, of which formation is pronounced by the low oxygen partial pressure of the ambient atmosphere during firing, has a deleterious effect on the life of insulation resistance under highly accelerated life testing. Tetragonality and the MnO-content are the decisive factors of the deterioration in capacitance under DC field. Dielectric materials composed of BaTiO3, MgO, CoO, MnO, and Ba0.4 Ca0.6 SiO3 showed superior stability in capacitance.
