抄録
There is seldom the radiative prop erty of semiconductor wafers. It is important to know radiative properties of the wafer with a thin film for the accurate measurement of wafer temperature using the radiative thermometer and the estimation of the film thickness at in -situ. We measured the spectral normal emissivity of silicon wafers with various films without changing the condition of a thin film at 600℃ and 900℃. The result showed that radiation characteristics greatly differ by film kind and film thickness. It seems to be able to the estimation of the film thickness in the process by measuring the infrared spectrum at in-situ using this property.
