抄録
In micro-fabricated electric device, non-equilibrium state might be appeared in metal and/or semiconductor that compose the device. In such a situation, the device performance estimation by the macroscopic transport equations that assume quasi-equilibrium distribution is difficult. Against the background of this difficulty, we are developing a numerical simulation based on Boltzmann transfer equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this paper, we show the BTE formulation and its application to the electric field problem in metallic plate. As numerical calculation result, we obtained the maximum of electric charge density at both boundary and the shifted-distribution function, which agree with physical intuition.
