C244 Thermal Conductivity of Individual SiC Nanowires

Abstract

Thermal conductivity measurement of individual silicon carbide (SiC) nanowire is conducted by using T-type nanosensor. Two kinds of SiC nanowires are measured with simple modeling of thermal contact resistance. One has SiC core of 126nm diameter and surrounding amorphous silicon-dioxide layer of 7nm thickness. Its thermal conductivity shows over 100W/mK at room temperature and has maximum conductivity at higher temperature than pure bulk SiC, whose phonon scattering mechanism is also discussed. The other has two bundled SiC cores of 64nm and 58nm diameter in amorphous layer and shows unusual temperature dependence of thermal conductivity.