抄録
The silicon single crystal is use for the semiconductor device and it is mainly manufactured by the Czochralski crystal growing method (Cz method). Under the Cz method, the forced convection and natural convection caused by the crystal rotation and the temperature difference between the crystal and crucible. In traditional system, the melt convection is controlled by the heater power, the crystal and crucible rotation. In this study, electromagnetic filed apply to the melt for control the melt convection in the crucible which is caused by the electric current and the magnetic field. The amplitude of electric current and the strength of magnetic field are varied and the velocity of fluid at the circumferential direction is measured. The melt convection is strongly affected by the intensity of electric current and magnetic field.
