Abstract
Growth rate of TiN film by thermal CVD has been investigated. When the setting temperature, Ts, is 1000℃, the growth rate increases rapidly in the beginning, and it decreases exponentially with the distance afterwards. In this case, the growth rate is controlled by the diffusion of TiCl_4 on the wall. The controlling step doesn't depend on the flow rate of gas. On the other hand, at Ts=800℃, the unreacted gas increases because the rate of surface reaction decreases. The growth rate depends on the temperature distribution. Therefore, growth rate of TiN film changes into diffusion controlled reaction and the surface reaction on the condition.
