The Proceedings of the Thermal Engineering Conference
Online ISSN : 2424-290X
2012
Session ID : G212
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G212 Influence of gas flow rate on Si deposition rate by non-equilibrium plasma CVD
Kazuki MatsuokaNaoki OkamotoDaisuke AndoJiro NakamuraSatoshi NishidaHiroshi MutaShizuma Kuribayashi
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© 2012 The Japan Society of Mechanical Engineers
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