ベッセルビームを用いた SiC 基板レーザドリリング

抄録

SiC is expected as a next generation power semiconductor material due to its excellent properties. For SiC power device production, an efficient drilling method for 3D packaging technology aiming at further space saving is needed. In order to improve the quality of laser drilling process on SiC, Bessel beam laser drilling was conducted. Due to side lobes of Bessel beam, the effects of its long focal depth and small spot size were not obtained under the processing parameters we selected. To find appropriate processing conditions of Bessel beam laser drilling, further investigation is needed.