材料
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
論文
CdTe障壁層中におけるPb1-xSnxTeナノドットの自己組織化とフォトルミネッセンス特性
小池 一歩中田 裕紀岩本 敦矢野 満明
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2012 年 61 巻 9 号 p. 771-776

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抄録
This paper describes molecular beam epitaxial growth and photoluminescence properties of single-crystalline Pb0.7Sn0.3Te nanodots embedded in a wide bandgap CdTe host matrix. These nanodots were self-organized by postgrowth annealing of a lattice-type mismatched Pb0.7Sn0.3Te(rocksalt)/CdTe(zincblende) single quantum well. A highly efficient midinfrared emission in the 3∼5μm atmospheric window was observed from the nanodots even at higher temperatures than 300K. By considering both effects of strain-induced band deformation and quantum confinement in nanodot potentials, the emission energy observed was found to agree with the theoretical transition energy in the type I quantum well.
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© 2012 日本材料学会
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