抄録
Effects of doping 1,2-diphenoxyethane (DPE) to the Ru(bpy)3(PF6)2 light emitting layer of a solid state electro chemical luminescence (SSECL) device, fabricated by simply paste and coating techniques in air, on its luminance efficiency have been investigated. Device of which molar ratio of DPE / Ru(bpy)3(PF6)2 in the light emitting layer is 0.2 showed 5.6times stronger luminescence than the DPE / Ru(bpy)3(PF6)2 - free device. Increase of the DPE / Ru(bpy)3(PF6)2 molar ratio increase the crystalline phase, and the light-emitting layer of high resistivity is obtained. Appropriate doping ratio of DPE / Ru(bpy)3(PF6)2 can allow both high luminance and low current operations of the device.
