有機薄膜トランジスタ用ポリシルセスキオキサンゲート絶縁膜の紫外線重合における光重合開始剤の検討

抄録

We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using Irgacure^TM 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when Irgacure^TM 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from Irgacure^TM 184 to Irgacure^TM 907 with a sensitizer.