原子層半導体と分子性化合物の融合機能化

抄録

In the last decade, two-dimensional materials have attracted attention in electronics and physics due to their atomically thin structures and quantum-confined electronic states. Since the intrinsic electronic properties are exceptionally large with a sub-nm thick body, the upcoming semiconducting and quantum devices from the material will have a game-changing ability. However, the intrinsic nature of its high-performance is difficult to realize because of the atomically thin body. The conventional methods to tune the electronic structures are not suitable because the high energy induces fractures of the thin-crystalline lattice. In this paper, we review tuning methods in the electronic structures of two-dimensional semiconducting materials, transition-metal dichalcogenides (TMDCs), using a gentle molecular solution technique. The method can modulate the electronic properties of the semiconductors dramatically; for example, the carrier concentration increases up to a degenerate state (metallic state), and the photoluminescence intensity increases two orders of magnitude. The molecular solution method is an option for harnessing the performance of two-dimensional materials to achieve atomically thin optoelectronics.