ミストCVD法を用いたSi基板上Ga₂O₃成長

抄録

Gallium oxide is receiving increased attention as a next-generation material for power devices having both low switching loss and high breakdown voltage. In this paper, we described the growth of Ga₂O₃ on Si substrates using mist chemical vapor deposition (CVD) technique. Firstly, amorphous Ga₂O₃ and polycrystalline Ga₂O₃ thin films were obtained on Si(111) substrates accompanying with rough surface conditions and low crystallinity. Secondly, <001> oriented κ-Ga₂O₃ thin films were grown on n-type Si(100) and Si(111) substrates by introducing ZnO buffer layers to avoid influence from surface oxide layers of Si substrates. The RMS value of κ-Ga₂O₃ was smaller than the values of amorphous Ga₂O₃ and polycrystalline Ga₂O₃ on Si(111). These results suggested that the ZnO buffer layer on Si played significant roles in crystallinity and improved planarity of κ-Ga₂O₃.