抄録
Preparation of ultrafine nitride particles has been performed using the reactive gas evaporation technique with electron beam heating. By evaporating metals of group IIIa, IVa, Va and VIa in an atmosphere of N2 or NH3 gas at about 1Torr, nine kinds of crystalline nitride particles, i. e. AlN, TiN, ZrN, HfN, VN, NbN, CrN, Mo2N and W2N, were produced. These particles were studied by means of electron microscopy and X-ray diffraction method. All the nitride particles were found to have a particle size smaller than 10nm, and were confirmed to be a single phase with the ordinary crystal structure: Wurtzite-type for AlN, NaCl-type for TiN, ZrN, HfN, VN, NbN and CrN, and partially disordered NaCl-type for Mo2N and W2N.
The crucible-less evaporation method, which is free from impurities caused by a crucible damage, can be adoped for the most metals of group IVa, Va and VIa.
