2001 年 50 巻 3Appendix 号 p. 1-6
The effects of various experimental conditions on the preferred orientations of titanium nitride (TiN) thin films were investigated. These films were formed on Si (100) wafers and sapphire (0001) substrates by ion beam assisted deposition (IBAD) with various N/Ti transport ratios, N ion incidence angles, film thicknesses and substrate temperatures. The acceleration voltage of the incident ions was 1kV. The preferred orientation of the TiN films changed from (111) to (100) as the N/Ti transport ratios and ion incidence angles increased. This phenomenon is caused by the selective damage to crystal growth due to the energy of the bombarding particles. It was also found that an increase in film thickness changed the preferred orientation of the TiN (100) film to a (100) plus (110) orientation. Furthermore, this orientation reverted to (100) with the heating of the substrate during film preparation. It is concluded that these phenomena were caused by the process of minimizing the overall energy. Thus, the heating of the substrate was useful for synthesizing thick TiN (100) films in this preparation method. Transmission electron microscopy (TEM) observation of TiN (100) films suggested that these films had good crystallinity.
