抄録
The present study investigates the behavior of residual stress and thermal stress in thin copper films with X-rays. The copper films were deposited on a glass substrate by radio frequency (RF) sputtering. In-situ thermal stress measurement was also made on copper films during heat cycles. The residual stress of as-deposited state was tensile regardless of the conditions of film preparation. Early in the cooling stage, thermal stress behaves in an elastic manner so as to reduce the tensile stress until it stabilizes close to zero. In the cooling stage, little increase in the thermal stress was observed above 100°C and the hysteresis of thermal cycle was very small.
