抄録
Surface reaction process of fluorocarbon radicals (CFx) in the contact hole etching for ultra-large-integrated circuits (ULSIs) is presented. When H2 is added to fluorocarbon gases, the surface reactions of CF and CF2 radicals are intensively reported. CF2 radicals contribute considerably to the fluorocarbon film deposition under plasma irradiations. The behaviours of CF radical densities in the plasma over the film composition on the chamber walls are investigated.
