抄録
We have developed a n ultra-compact Power chip size package （Power-CSP） technology suitable for 1200 V/100 A SiC
MOSFETs. Power-CSP features an extended gate electrode structure for ease of attaching gate and source surface of power
semiconductor chip. In addition, the high insulation structure constitutes a chip-level thin package, which enables low thermal
resistance and low inductance. In this paper, the structure of Power-CSP, electrical characteristics and thermal resistance evaluation
results are described in detail. In the future, Power-CSP will make it possible to easily design and develop ultra-compact double
sided cooled power modules. Furthermore, the implementation of Power-CSP and the integration of power units will enable a
dramatic increase in power density and efficiency of power convertor.
