2000 年 21 巻 12 号 p. 791-799
We report the Schottky limit and a charge neutrality level (CNL) experimentally demonstrated at metal/6H-SiC (0001) interfaces. A passivated SiC surface with an almost flat band was formed by dipping the substrate in boiling pure water before metallization. The total density of interface states was 4.6 × 1010 states · cm-2/eV, indicating that the density of the metal induced gap states (MIGS) was less than this value. In contrast, at incompletely passivated interfaces without the boiling water dipping process, a broad continuum of interface states was observed with the CNL located at 0.797 eV from the conduction band minimum. The origin of these interface states was found to be in the disordered interface layers.