表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集 : 窒化物半導体表面の研究の現状
同軸型直衝突イオン散乱分光法による窒化物半導体の極性評価
―GaN薄膜堆積プロセスと成長方位との相関―
角谷 正友大西 剛伊藤 孝浩福家 俊郎
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2000 年 21 巻 3 号 p. 142-147

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Nondestructive determination of the polarity of GaN has been achieved by use of coaxial impact collision ion scattering spectroscopy. GaN films were deposited on c-plane sapphire substrates by a two-step atmospheric pressure metalorganic chemical vapor deposition using GaN buffer layers. The correlation between the samples prepared by interrupting the growth sequence at the various stage and their polarity was systematically investigated. It has been found that the polar direction of GaN growth is influenced by the polarity at the interface prior to the deposition of GaN epitaxial layer. We describe the mechanism of determining the polar direction by addressing our recent research related to substrate nitridation, buffer layer, and annealing of buffer layer.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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