小特集：ケルビンフォース法による表面電位測定技術の現状
KFMによるGaAs(110)面上InAs薄膜表面のポテンシャル計測
2001 年 22 巻 5 号 p. 309-314
詳細
2001 年 22 巻 5 号 p. 309-314
Using Kelvin probe force microscopy (KFM), we have measured the surface potential of InAs thin films grown on flat or vicinal surfaces of GaAs(110) substrates. We found that the observed potential distribution corresponded to the surface corrugation of the InAs films and that the evaluated surface Fermi level position of the thick InAs was slightly closer to the vacuum level than that of the thin InAs. It was also found that the removal of the water-related contamination from both surfaces of the tip and the sample was very effective in order to improve the reliability of the potential measurements by KFM.
