研究紹介
気相雰囲気下の表面プロセスのイオンビームその場計測
—Ge/Si(001)水素サーファクタント媒介エピタキシー—
2002 年 23 巻 12 号 p. 759-766
詳細
2002 年 23 巻 12 号 p. 759-766
We have recently developed coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) operable in a gas phase atmosphere in the pressure regime up to 10−4 Torr. This apparatus was applied to real-time monitoring of the growth of Ge on Si(001) with dynamically supplied atomic hydrogen (H) as a surfactant. The Ge thin film growth on a H-terminated Si(001) surface was also investigated. On this basis, it has been revealed that (1) a submonolayer of H atoms readily acts as a surfactant, (2) the intermixing of Ge and Si occurs at the initial stage of Ge growth in the presence of H-surfactant, and (3) beyond optimal H coverage of about 0.6 monolayer, surface roughening occurs even though a monohydride phase is maintained at the growth front.
