表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:半導体表面界面形成の微視的理解における理論の進展
シリコン表面熱酸化初期過程の反応速度論
末光 眞希
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ジャーナル フリー

2002 年 23 巻 2 号 p. 95-103

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Autocatalytic-reaction model, a chemical-kinetics model that provides an integrated description of various dynamical processes in the very initial oxidation of Si(100) surface, is illustrated. The nonlinear rate equation of this model has an analytical solution. With only two fitting parameters as it is, the solution quantitatively reproduces the experimental time-evolution of the surface oxide coverage in various oxidation modes, which range from the Langmuir-type in the low-temperature/high-pressure regime to the two-dimensional-island-growth-type in the high-temperature/low-pressure regime, or even to the one in the etching regime containing simultaneous decomposition of grown oxides in addition to their growth. Microscopic background behind the model is discussed in comparison with existing oxidation models and thin-film-growth models.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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