ノート
O2分子のSi(001)表面への初期吸着とSiO脱離に及ぼす運動エネルギーの影響
2002 年 23 巻 8 号 p. 519-523
詳細
2002 年 23 巻 8 号 p. 519-523
Relative initial adsorption probabilities of O2 molecules on Si(001) surfaces at room temperature and Si18O desorption yield at a surface temperature region from 900 K to 1300 K have been measured as a function of O2 incident energy up to 3.3 eV. Although the adsorption probability showed the minimum at 0.3 eV and to be constant at incident energy over 1 eV, the SiO desorption yield at surface temperatures over 1000 K increased with increasing the incident energy due to the induced-oxidation at silicon dimer bridge sites, their backbond sites and subsurface backbond sites, and the variation of angular distribution of SiO desorption caused by the induced-oxidation.
