半金属・半導体のコヒーレントフォノン

—緩和ダイナミクスへのイオン照射誘起欠陥の影響—

抄録

Coherent lattice oscillation can be excited in semimetals and semiconductors with femtosecond optical pulses. The dephasing of the coherent phonons, typically in the picosecond time scale, is dominated by the interaction with photo-excited carriers, incoherent (thermal) phonons, and defects such as impurities and vacancies. Here we present our femtosecond pump-probe study on the relaxation dynamics of the coherent phonons and the photo-excited carriers in ion-irradiated semimetals and semiconductors. The dephasing rate of the coherent optical phonon in bismuth is increased linearly with increasing ion dose due to the scattering by irradiation-induced defects. The dose dependence of the relaxation of the coherent acoustic phonon of graphite is quantitatively explained by a simple model in which a propagating wave is scattered by single vacancies, whereas that of the optical phonon by a modified mass-defect scattering model. In GaAs, the relaxation dynamics of LO phonon-plasmon coupled modes and photo-excited carriers provide quantitative information of carrier trapping due to vacancies.