Recently, SiC is focused as a next-generation semiconductor power device because of its excellent properties. However, SiC is hard to be figured due to the physical hardness and chemical inertness. Therefore, there exist many scratches, damaged layers, and polishing haze on the commercial SiC wafers, which deteriorate surface integrity. We have developed a novel damage-free ultraprecision figuring technique and obtain atomically-flat and damage-free SiC(0001) surfaces. Using the ultraprecision figured on-axis and 8o-off 4H-SiC(0001) surfaces as substrates, we demonstrated the formation of graphene layers upon them, and successfully produced atomically-flat monolayer-graphene with high-qualities, on entire ultraprecision figured SiC surfaces by annealing in ultra-high vacuum without any Si flux.
