特集：π電子系有機低分子固体の界面電子物性
有機モット絶縁体界面を用いた相転移トランジスタ
2011 年 32 巻 1 号 p. 33-38
詳細
2011 年 32 巻 1 号 p. 33-38
This paper describes a band-filling-controlled Mott transition at an interface of an organic field effect transistor. Conductance and Hall coefficient of a thin crystal of an organic Mott-insulator laminated onto a SiO2/Si substrate were measured under various gate electric fields at low temperature. The maximum field effect mobility of this device reached 94 cm2/Vs. The carrier density at finite positive gate voltages corresponds to that of a metallic state of this material, rather than that of a Mott-insulating state. This observation indicates the electric-field induced Mott transition in the interface.
