有機金属化合物を用いたSiC/Geナノドット積層構造の作製

姉崎 豊; 大谷 孝史; 須藤 晴紀; 加藤 孝弘; 加藤 有行; 末光 眞希; 成田 克; 中澤 日出樹; 安井 寛治

doi:10.1380/jsssj.33.376

第31回表面科学学術講演会特集号 [ I ]

有機金属化合物を用いたSiC/Geナノドット積層構造の作製

姉崎豊, 大谷孝史, 須藤晴紀, 加藤孝弘, 加藤有行, 末光眞希, 成田克, 中澤日出樹, 安井寛治

著者情報

キーワード: Ge-nanodots, monomethylgermane, XPS, STM, photoluminescence

ジャーナルフリー

2012 年 33 巻 7 号 p. 376-381

DOI https://doi.org/10.1380/jsssj.33.376

詳細

抄録

Ge(GeC_x) and SiC(SiCGe_x) nanodots were formed on Si(001)2^ooff substrates after the formation of Si c(4×4) structure using monomethylgermane (MMGe). Surface structure of the Ge(GeC_x) and SiC(SiCGe_x) nanodots was measured by scanning tunneling microscopy (STM). From the quantitative analysis of X-ray photoelectron spectroscopy (XPS), it was estimated that the Ge(GeC_x) and SiC(SiCGe_x) nanodots existed in the ratio of about 1 : 2.4. SiC capping layer was formed on the Ge(GeC_x), SiC(SiCGe_x) nanodots generated at 550∼650^oC using monomethylsilane (MMSi). Photoluminescence (PL) spectra from the SiC/Ge (GeC_x), SiC(SiCGe_x) dots/SiC_x stacked structure were also measured.

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