Relationship between Characteristics of SiC-SBD and Surface Defect

Abstract

The good relations between the reverse characteristics of 4H-SiC JBS diodes and the surface defects were obtained. The reverse characteristics of 4H-SiC JBS diodes were categorized in three groups as follows : (A) low blocking voltage, (B) high leakage current and (C) low leakage current. The groups of (A) and (B) were caused by the existences of the micropipe and small particles, and the carrot-like defects on the SiC surfaces, respectively. In group (C), nanosized circular cone shaped pits (nanopits) were observed at the leakage current sources. The positions of nanopits corresponded to the positions of threading dislocations.