窒化物半導体異種接合の界面評価と制御

抄録

Interface properties of GaN-based heterostructures have been characterized. Schottky contacts on dry-etched n-GaN layers showed leaky I-V characteristics. An anneal process at 400°C was effective in recovering the rectifying characteristics. To characterize interface properties of Al₂O₃ insulated gates on AlGaN/GaN structures with and without the inductively coupled plasma (ICP) etching of AlGaN, we have developed a C-V calculation method taking into account electronic state charges at the Al₂O₃/AlGaN interface and a photoassisted C-V technique utilizing photons with energies less than the bandgap of AlGaN. It was found that the ICP etching caused the monolayer-level interface roughness, disorder of the chemical bonds and formation of various types of defect complexes at the AlGaN surface, resulting in poor C-V characteristics due to high-density interface states at the Al₂O₃/AlGaN interface.