2014 年 35 巻 4 号 p. 196-201
Controlling in-plane orientation and obtaining single-crystalline thin films are among the important factors to improve the carrier transport in organic thin film transistors (TFTs). Since the surface of the substrate is often amorphous in organic TFTs, epitaxial growth technique is not applicable to control the orientation of the thin films. This article focuses on graphoepitaxy as the technique to control the in-plane orientation of organic thin films and improve the carrier transport. While graphoepitaxy has been studied nearly forty years in inorganic materials, graphoepitaxy of organic materials shows novel and peculiar characteristics which are not observed in inorganic systems. Organic graphoepitaxy is not a mere diversion of old technique but a phenomenon which derives new aspects and possibility from organic materials.
