シリコン結晶欠陥評価へのカソードルミネッセンス法の応用

抄録

Cathodoluminescence (CL) is a kind of light emission as a result of electron beam irradiation to various materials. In the measurement technique using CL, scanning electron microscope (SEM) is usually used as an electron beam source, and consequently CL measurement method is suitable for the characterization of electronic devices. However, the application to electronic devices made of silicon (Si) is restricted because of the low luminescence efficiency of Si. In this paper, we show the application of CL spectroscopy to the characterization of Si electronic devices and discuss the results of it. In particular, we focus the point defects and dislocations generated during device fabrication process.