Electron traps introduced into the surface region of n-type silicon by Schottky diode fabrication have been investigated with regard to the spatial distribution of the traps and the effect of annealing and etching. Concentrations of the electron traps exponentially decrease into those of the bulk of Au/n-Si Schottky barrier diodes. The trap distribution broadens during a series of isochronal annealing. The broadening of trap concentraion profiles can be interpreted in terms of the diffusion of mobile point defects associated with the electron traps. The effect of etching on the trap profiles shows that the point defects are driven into the bulk during the etching process. It is suggested that the electron traps are associated with hydrogen introduced into the silicon surface during etching.
