SIMSによるTa中Cの深さ方向分析

抄録

Factors influencing the secondary ion yield and depth resolution in the SIMS depth profiling of carbon in the tantalum thin films have been investigated. The highest ion yield of C has been achieved with ¹⁹³TaC^- by using Cs⁺ primary ion beam. However some changes in surface topography during Cs⁺ ion sputtering were observed. We found that the extent of the changes differed depending on implanted C⁺ doses and that the depth resolution became lower as the quantity of dosed C increased. These phenomena are supposed to be due to that Ta crystals became amorphous and carbonized.