イオンビーム誘起結晶成長法による非熱平衡組成半導体の作製
1997 年 18 巻 12 号 p. 803-809
詳細
1997 年 18 巻 12 号 p. 803-809
Ion-beam-induced epitaxial crystallization (IBIEC) is an appropriate method for the crystalline growth of semiconducting materials with non-thermal-equilibrium composition. In this review, I focus on the synthesis of the Si-based group IV semiconductors, such as Si1-xGex, Si1-x-yGexCy, Si1-yCy and Si1-zSnz formed by ion implantation. As far as Si1-x-yGexCy grown by IBIEC is concerned, Si atoms are substitutionally replaced with C atoms, and hence the lattice matching between Si1-x-yGexCy and Si is better for IBIEC than for solid phase epitaxial growth (SPEG), because of the formation of SiC in the latter. However, small vacancy clusters are produced in the samples grown by IBIEC. Efforts should be made to annihilate these defects. I also demonstrate the feasibility of synthesizing Si1-yCy and Si1-zSnz with non-thermal-equilibrium composition by IBIEC.
