RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2×1 Surface

Ki-Seon KIM; Yuji TAKAKUWA; Tadashi ABUKAWA; Shozo KONO

doi:10.1380/jsssj.18.501

Ki-Seon KIM, Yuji TAKAKUWA, Tadashi ABUKAWA, Shozo KONO

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ジャーナルフリー

1997 年 18 巻 8 号 p. 501-505

DOI https://doi.org/10.1380/jsssj.18.501

詳細

Published: 1997/08/10 Received: 1997/06/09 Available on J-STAGE: 2009/08/07 Accepted: 1997/06/19 Advance online publication: - Revised: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文タイトル訂正内容: Wrong : RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2×1 Surface
Right : RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2×1 Surface

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : Sb desorption on a single-domain Si(001)2×1 surface has been studied using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From the time evolution of Sb coverage, θ_Sb, during Sb desorption as monitored from Sb MNN Auger spectra, we have found that the Sb desorption kinetics are divided into two coverage regions; (I) 1 ML>θ_Sb>0.3 ML and (II) 0.3 ML>θ_Sb>0 ML. It was also found that the Sb desorption is a first-order reaction in each coverage region with activation energies of (I) 3.61 eV and (II) 3.63 eV and pre-exponential factors of desorption coefficient of (I) 2.9×10¹⁵ S^-1 and (II) 5.0×10¹⁵ S^-1. This difference in pre-exponential factor is explained in term of the change in the morphology and structure of Sb layer as monitored by RHEED.
Right : Sb desorption on a single-domain Si(001)2×1 surface has been studied using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From the time evolution of Sb coverage, θ_Sb, during Sb desorption as monitored from Sb MNN Auger spectra, we have found that the Sb desorption kinetics are divided into two coverage regions; (I) 1 ML>θ_Sb>0.3 ML and (II) 0.3 ML>θ_Sb>0 ML. It was also found that the Sb desorption is a first-order reaction in each coverage region with activation energies of (I) 3.61 eV and (II) 3.63 eV and pre-exponential factors of desorption coefficient of (I) 2.9×10¹⁵ S^-1 and (II) 5.0×10¹⁵ S^-1. This difference in pre-exponential factor is explained in term of the change in the morphology and structure of Sb layer as monitored by RHEED.

抄録

Sb desorption on a single-domain Si(001)2×1 surface has been studied using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From the time evolution of Sb coverage, θ_Sb, during Sb desorption as monitored from Sb MNN Auger spectra, we have found that the Sb desorption kinetics are divided into two coverage regions; (I) 1 ML>θ_Sb>0.3 ML and (II) 0.3 ML>θ_Sb>0 ML. It was also found that the Sb desorption is a first-order reaction in each coverage region with activation energies of (I) 3.61 eV and (II) 3.63 eV and pre-exponential factors of desorption coefficient of (I) 2.9×10¹⁵ S^-1 and (II) 5.0×10¹⁵ S^-1. This difference in pre-exponential factor is explained in term of the change in the morphology and structure of Sb layer as monitored by RHEED.

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