MBE法による半導体超格子の製作と光学的特性
1982 年 3 巻 3 号 p. 136-142
詳細
1982 年 3 巻 3 号 p. 136-142
GaAs-AlAs superlattices were grown by molecular beam epitaxy with various widths of the GaAs quantum well. A non-destructive X-ray diffraction technique was shown to be a practical method to measure the GaAs quantum well width Lz with an accuracy of 10%. Photoluminescence measurements showed the main carrier recombination process to be from the n=1 electron quantum level to the n=1 heavy hole level. Optical absorption spectra exhibited the sharply peaked structure assocated with excitons at room temperature. MQW laser diodes with GaAs-Asx Ga1-xAs superlattice active layers had lower threshold current density than in conventional DH laser diodes. This illustrated the good optical quality of the superlattices.
