抄録
In this study, we have fabricated high-electric-field-applicable p-i-p structures using a photolithographic process with high-quality homoepitaxial diamond grown by means of high-power microwave-plasma chemical-vapor-deposition (CVD) method. Current-voltage (I-V) characteristics of the diamond p-i-p devices revealed rapid increases in current due to impact excitation events of electrons from the valence band whereas such space-charge-limited currents as I ∝ V 2 were observed at sufficiently high electric fields. Substantial differences in the I-V characteristics observed among the p-i-p devices strongly depended on the electronic properties of the CVD diamond i layers employed. Electroluminescence measured for a p-i-p device was compared with cathodoluminescence taken from the diamond i layer.
