抄録
Zinc-ion implantation combined with thermal oxidation was carried out to fabricate zinc-oxide (ZnO) nanoparticles (NPs) in silica glass (SiO2). A SiO2 substrate was implanted with Zn+ ions of 60 keV to 1.0×1017 ions/cm2. In as-implanted state, the sample shows a strong absorption peak at ∼4.8 eV and a weak one at ∼1.2 eV due to Zn metallic NPs. After annealing in oxygen gas at 700°C for 1 hour, the absorption in the visible region disappears and a new distinct absorption edge appears at ∼3.3 eV. The grazing-incident-angle x-ray diffraction (GXRD) confirms the formation of ZnO NPs. The ZnO NPs show a photoluminescence (PL) peak at 3.32 eV under pulsed nitrogen-laser excitation. Annealing at 900°C induces an additional shift of the absorption edge to ∼5.3 eV. The additional shift is due to the formation of a Zn2SiO4-phase which has been confirmed by GXRD.
